The 2.5Gbps APD chip features a forward-illuminated planar structure with a bare die and PN junction electrodes on different planes. It offers high bandwidth, high responsivity, and high reliability.

The 10Gbps APD chip features a front-illuminated mesa structure with a 40μm active area diameter. It delivers high bandwidth, high responsivity, and high reliability, meeting the requirements for 10Gbps data communication rates.

The 10Gbps InGaAs PIN Photodiode Chip features a front-illuminated mesa structure with a 50μm active area diameter. It provides high bandwidth, high responsivity, and high reliability, meeting the requirements for 10Gbps data communication.

High-Performance Front-Illuminated Mesa-Type InGaAs/InP APD  Chip Series,This series features a front-illuminated mesa structure based on InGaAs/InP materials, offering high responsivity, high gain, low dark current, and exceptional reliability. It fully meets the requirements for 25Gbps data communication applications.

25Gbps APD Chip with COC Structure,Featuring a Chip-on-Carrier (COC) design and a 100 μm optical aperture, this APD chip delivers high bandwidth, high responsivity, and high reliability, meeting the requirements for 25Gbps data communication applications.

25Gbps InGaAs PIN Photodiode Chip,This front-illuminated mesa-structure photodiode chip features a 20 μm photosensitive area diameter, delivering high bandwidth, high responsivity, and high reliability. It fully meets the requirements for 25Gbps data communication applications.

The 50Gbps InGaAs Avalanche Photodiode (APD) chip features a chip-on-carrier (COC) package and a back-illuminated structure, delivering high bandwidth and high responsivity.

50Gbps InGaAs PIN Photodiode,This front-illuminated photodiode chip utilizes a semi-insulating substrate with coplanar electrodes, featuring a 16 μm photosensitive area. It is designed for high-speed data communication applications requiring 50Gbps performance.

Packaged with a high-performance 10G APD, 5-pin TO46 base, hemispherical lens, and 50μm multimode pigtail, ensuring stable operation across industrial temperature ranges.

Packaged with a high-performance 25G APD, 7-pin TO46 base, aspherical lens, and 50μm multimode pigtail, delivering stable operation across industrial temperature ranges

High-Performance Front-Illuminated Planar InP/InGaAs APD Photodiode Chip Series,This series of front-illuminated planar structure APD photodiode chips utilizes an InP/InGaAs material system, delivering high responsivity, high gain, low dark current, and exceptional reliability.

High-Performance Front-Illuminated Planar InGaAs APD Photodiode Chip Series,This series features a front-illuminated planar structure design, delivering high responsivity, high gain, low dark current, low noise, and exceptional reliability. Ideal for eye-safe LiDAR applications and other demanding fields.

High-Performance Planar InGaAs APD Photodiode Chip Series,This series features a front-illuminated planar structure, delivering high responsivity, high gain, low dark current, low noise, and exceptional reliability. Designed for eye-safe LiDAR applications and other advanced fields

The InGaAs APD Quadrant Photodetector is a high-performance near-infrared device with a spectral response range of 0.9–1.7 μm. It offers high detection sensitivity, excellent spatial resolution, and fast response speed.

The Ultra-Low Dark Current PD is a front-illuminated photodiode chip, optimized for operation at 1654 nm. It features a conductive substrate, a single-electrode design, and is available with active area diameters of 200 μm or 250 μm.

This series of front-illuminated InGaAs PD photodiode chips is available in active area diameters of 1, 2, 3, 5, 10, and 16 mm. It features a broad spectral response range from 960 to 1700 nm, a conductive substrate, and a four-electrode design.

The Si PIN is a photodiode chip optimized for a wavelength of 905 nm, featuring an active area diameter of 2000 µm.

The InGaAs Single-Photon Avalanche Diode (SPAD) is a specialized device designed for single-photon detection in the short-wave near-infrared (NIR) range. It meets the technical requirements for high-efficiency and low-noise single-photon detection in applications such as quantum secure communication and weak light detection, enabling precise sensing of single photons within the 0.9–1.7 μm wavelength band.