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About Us
Vital Core Opto-electronics Technology (Wuhan) Co., Ltd. specializes in high-end lasers and detector chips, research and development, manufacturing and sales in one of the science and technology-oriented enterprises, the main business involves optical communications, intelligent sensing, infrared imaging, quantum information and other fields. The company has an advanced optical chip production line and chip packaging platform in Wuhan, 3000 square meters of class 1,000/class 100/class 10 purification plant, equipped with more than 100 sets of advanced production and testing equipment. The company has established a complete R & D, production and quality management system, obtained a number of patents, the core technology team has a wealth of experience in the development of compound semiconductor technology, based on the mature silicon-based, InP, GaAs material system chip process platform, has successfully developed a variety of products, is committed to solving the long-term dependence on foreign imports of high-end chip bottlenecks, to provide downstream customers with high-quality full range of optical chip products and technical services. chip products and technical services for downstream customers.
Our Products
10Gbps InGaAs APD
The 10Gbps APD chip is an ortho-illuminated table top type structure with a photosensitive surface diameter of 40μm, featuring high bandwidth, high responsiveness and high reliability to meet the 10Gbps data communication rate requirements.
25Gbps InGaAs APD
25Gbps APD chip for the positive illumination table surface type junction should be used, the field of photosensitive surface diameter of 16μm, with high bandwidth, high responsiveness, high reliability and other characteristics, to meet the 25Gbps data communication rate requirements.
25Gbps InGaAs APD COC
The 25Gbps APD chip is a COC structure with 100μm aperture, featuring high bandwidth, high responsiveness and high reliability to meet the requirements of 25Gbps data communication rate.
10Gbps InGaAs PIN
The 10Gbps PIN chip is positive optical entry with 30μm and 50μm optical entry apertures, featuring high bandwidth, high responsiveness and high reliability to meet the 10Gbps data communication rate requirements.
25Gbps InGaAs PIN
The 25Gbps PIN chip is positive optical entry with an optical entry aperture of 20μm, featuring high bandwidth, high responsiveness, and high reliability to meet the 25Gbps data communication rate requirements.
InGaAs Geiger Mode Avalanche Photodiodes
InGaAs avalanche photodiode (APD) is a specialized device for short-wave near-infrared single photon detection, which can meet the technical demand for high-efficiency and low-noise single-photon detection in the fields of quantum communication secrecy and low-light detection, and realize the single-photon detection at 0.9 ~ 1.7 μm wavelength.
Large Photosensitive Surface InGaAs APD Series Chips
High-performance ortho-planar structure InGaAs APD photodiode chip series with high responsiveness, high gain, low dark current, low noise, and high reliability, which can be used in human eye safety LIDAR and other fields. APD bare core and TO package are available, and customized service development is accepted.
InGaAs APD Four Quadrant Photodetector Chip
The InGaAs APD four-quadrant photodetector chip is a high-performance photoelectric position detector chip in the near-infrared, with a spectral response in the range of 0.9~1.7 μm, high detection sensitivity, high spatial resolution, and fast response speed.
Ultra-low Dark Current PD Photodiode Chips
The ultra-low dark current PD is an ortho-illuminated photodiode chip with an operating wavelength optimized at 1550 nm, a conductive substrate, four electrodes, and a photosensitive surface size of 500 um.
InGaAs APD Diversity Line Array Detector Chip
InGaAs APD 16×1 and 8×1 line array detector chips are designed for LIDAR and other applications, with 430μm×150μm square photosensitive surface, 70μm pixel spacing, and high consistency of optoelectronic characteristics of each pixel.
1654nm PD Photodiode Chip
The 1654PD is an ortho-illuminated photodiode chip with an operating center wave of 1654nm, a conductive substrate, four electrodes, and a photosensitive surface size of 500um.