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200/250/350/500um InGaAs PD Photodiode Chip
The 200/250/350/500 μm InGaAs PD is a forward-illuminated photodiode chip with a center wavelength of 1550 nm, a conductive substrate, one electrode at 200/250 μm, four electrodes at 350/500 μm, and a photosensitive area size of 200/250/350/500 μm.
Product Features
- High Responsiveness
- Ultra-low Dark Current
Application Areas
- Optical Power Meter
- Instrumentation
Product Performance Indicators
